SYSTEMS AND METHODS FOR SRAM WITH BACKUP NON-VOLATILE MEMORY THAT INCLUDES MTJ RESISTIVE ELEMENTS

摘要

A memory device has an SRAM that stores a logic state. A first MTJ has two terminals. A second one of the terminals is coupled to a storing node. A first terminal of a second MTJ is coupled to the storing node. The first and second MTJs are programmed to a first resistance by flowing current from the first second terminals and to a second resistance by flowing current from the second to first terminal. A storing circuit is coupled to the storing node, the SRAM cell, and a non-volatile word line. The storing circuit couples the logic state of the SRAM cell to the storing node during a store mode. The logic state of the SRAM cell is stored in the first and second MTJs by applying a storing voltage between the first terminal of the first MTJ and the second terminal of the second MTJ of a first polarity then a second polarity.

主权项

1. A memory device, comprising:
an SRAM cell that stores a logic state; a first MTJ having a first terminal and a second terminal coupled to a storing node; a second MTJ having a first terminal and a second terminal, wherein the first terminal of the second MTJ is coupled to the storing node, and wherein the first and second MTJs are characterized as being programmed to a first resistance state by flowing current from the first terminal to the second terminal and to a second resistance state, different from the first resistance state, by flowing current from the second terminal to the first terminal; a storing circuit coupled to the storing node, the SRAM cell, and a non-volatile word line, wherein the storing circuit couples the logic state of the SRAM cell to the storing node during a store mode; wherein, during the store mode, the logic state of the SRAM cell is stored in the first and second MTJs by applying a storing voltage between the first terminal of the first MTJ and the second terminal of the second MTJ of a first polarity during a first time period of a store operation and a second polarity during a second time period of the store operation.