发明名称 |
Method of fabricating an oxynitride-capped high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory |
摘要 |
A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a high dielectric constant layer 12 on a floating gate 10 and an oxynitride layer 14 on the high dielectric constant layer 12. A control gate 18 may be formed on the oxynitride layer 14 to produce a dual gate structure with a high capacitance and therefore a high coupling ratio.
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申请公布号 |
US6025228(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19970978398 |
申请日期 |
1997.11.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
IBOK, EFFIONG;HE, YUE-SONG |
分类号 |
H01L21/28;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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