发明名称 |
High-voltage field effect transistor having isolation structure |
摘要 |
A high-voltage MOSFET having isolation structure is provided. An N-type MOSFET includes a first deep N-type well. A first P-type region is formed in the first deep N-type well to enclose a first source region and a first contact region. A first drain region is formed in the first deep N-type well. A P-type MOSFET includes a second deep N-type well. A second P-type region is formed in the second deep N-type well to enclose a second drain region. A second source region and a second contact region are formed in the second deep N-type well. A polysilicon gate oxidation layer is disposed above the thin gate oxidation layer and the thick field oxidation layer to control the current in the channel of the MOSFET. Separated P-type regions provide further isolation between MOSFETs. A first gap and a second gap increase the breakdown voltage of the high-voltage MOSFET.
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申请公布号 |
US2006220170(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050096959 |
申请日期 |
2005.03.31 |
申请人 |
HUANG CHIH-FENG;CHIEN TUO-HSIN;LIN JENN-YU G;YANG TA-YUNG |
发明人 |
HUANG CHIH-FENG;CHIEN TUO-HSIN;LIN JENN-YU G.;YANG TA-YUNG |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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主权项 |
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地址 |
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