发明名称 |
HIGH SENSITIVITY RESIST COMPOSITION FOR ELECTRON-BASED LITHOGRAPHY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component. <P>SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007219545(A) |
申请公布日期 |
2007.08.30 |
申请号 |
JP20070116438 |
申请日期 |
2007.04.26 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
HUANG WU-SONG;LI WENJIE;MOREAU WAYNE;MEDEIROS DAVID E;PETRILLO KAREN E;LANG ROBERT N;ANGELOPOULOS MARIE |
分类号 |
G03F7/039;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|