发明名称 HIGH SENSITIVITY RESIST COMPOSITION FOR ELECTRON-BASED LITHOGRAPHY
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component. <P>SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007219545(A) 申请公布日期 2007.08.30
申请号 JP20070116438 申请日期 2007.04.26
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 HUANG WU-SONG;LI WENJIE;MOREAU WAYNE;MEDEIROS DAVID E;PETRILLO KAREN E;LANG ROBERT N;ANGELOPOULOS MARIE
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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