| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which activation timing of sense amplifiers included in cell arrays can be set for each cell array. <P>SOLUTION: The semiconductor storage device includes: cell arrays 11-1, 11-2 in which a plurality of memory cells are arranged in row and column directions; bit lines GBL0, GBLK connected to the plurality of memory cells arranged in the column direction, respectively; local sense amplifiers 12-0, 12-K connected to the bit lines, respectively; first and second dummy cell arrays in which a plurality of dummy cells are arranged in the row and column directions; a dummy word line connected to the plurality of dummy cells arranged in the row direction; dummy local bit lines 16-1, 16-2 which are connected to the plurality of dummy cells arranged in the column directions and to which outputs from the dummy word lines are input; and local sense activation circuits 17-1, 17-2 activating the local sense amplifiers 12-0, 12-K in response to first and second control signals output from the dummy local bit lines. <P>COPYRIGHT: (C)2008,JPO&INPIT |
