| 摘要 |
The method of manufacturing the semiconductor device is provided to prevent the loss of the insulating layer for the element isolation by the post cleaning by forming the loss preventing film on the top of the element isolation film. The pad nitride layer(110) is formed on the top of the semiconductor substrate(100). The pad nitride layer and semiconductor substrate of the element isolation reserved area are etched. The trench for the element isolation is formed. The first insulating layer(114a) filling the trench for the element isolation is formed in the front of substrate. The loss preventing film is formed in the surface of substrate. The second insulating layer is formed on the top of the loss preventing film. Until the pad nitride layer is exposed, the planarization process is performed on the second insulating layer. The pad nitride layer is removed. The side wall oxide is formed in the trench surface for the element isolation after a step for forming the trench for the element isolation. The liner nitride film and liner oxidation are formed on the top of the side wall oxide.
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