| 摘要 |
The semiconductor device and a method of forming the same are provided to form the barrier film at the interface between the fuse line and the interlayer insulating film and to prevent the crack generated in the fuse line in the fuse blowing process. The interlayer insulating film(210) having a plurality of grooves is formed in the fuse regions of the semiconductor substrate(200). The barrier film(216) is formed on the interlayer insulating film including the surface of groove. The fuse line conductive film for filling the groove is deposited on the barrier film. The conductive film and barrier film are removed until the top of the interlayer insulating film is exposed. The barrier film is formed with the lamination film structure of the oxide film and nitride film. The barrier film is formed with two or more multi-layer film structures. The fuse line conductive film is deposited with the metal layer or the polysilicon layer.
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