| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for preventing the abnormal growth of a metal silicide layer. SOLUTION: A gate insulating film 5, gate electrodes 6a, 6b, a source/drain n<SP>+</SP>-type semiconductor region 7b, and a p<SP>+</SP>-type semiconductor region 8b are formed on a semiconductor substrate 1. Then, the metal silicide layer 13 is formed on the gate electrodes 6a, 6b and the source/drain region with salicide technology. After plasma treatment is applied to the surface of the metal silicide layer 13 with reducing gas, an insulating film 21 formed of silicon nitride is accumulated on the semiconductor substrate 1 including the metal silicide layer 13 in a plasma CVD method without exposing the semiconductor substrate 1 to the atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
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