| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid local concentration of stress to a gate electrode while increasing the gate width. SOLUTION: A trench 5 is formed in a P type body region 4. An N type source region 8 is formed on the side of the trench 5 in the top layer of the body region 4. A P type body contact region 9 is formed to penetrate the source region 8 in the thickness direction. The body contact region 9 is arranged zigzag in the plan view. The trenches 5 are provided on both sides of the row direction X which intersects the column direction Y, i.e. the arranging direction, of the body contact regions 9 perpendicularly in the plan view. Each trench 5 extends in the column direction Y and a plurality of arcuate parts 11 are connected to meander such that a fixed clearance D is provided between adjoining trenches 5 and between the trench 5 and the body contact region 9. COPYRIGHT: (C)2009,JPO&INPIT
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