| 摘要 |
PROBLEM TO BE SOLVED: To form a single crystal semiconductor layer having large area over a large insulating substrate. SOLUTION: In the method for forming a single crystal semiconductor layer, a first porous layer and a second porous layer are formed on the side face of a single crystal semiconductor ingot, a groove and the single crystal semiconductor layer are formed in a part on the second porous layer, the single crystal semiconductor ingot is stuck onto the large insulating substrate, water jet is directed to the interface of the first porous layer and the second porous layer, and the single crystal semiconductor layer is stuck to the large insulating substrate. Or, in the method for forming a crystalline semiconductor layer, a crystalline semiconductor ingot is irradiated with hydrogen ions to form a hydrogen ion irradiation region in the crystalline semiconductor ingot, the crystalline semiconductor ingot is rolled over the large insulating substrate while being heated, the crystalline semiconductor layer is separated from the hydrogen ion irradiation region, and the crystalline semiconductor layer is stuck to the large insulating substrate. COPYRIGHT: (C)2009,JPO&INPIT |
