Chemically-Sensitive Field Effect Transistor

摘要

A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.

主权项

1. A chemically-sensitive field effect transistor comprising:
an integrated circuit structure comprising a conductive source and a conductive drain; a channel extending from the conductive source to the conductive drain, the channel composed of a one-dimensional transistor material or a two-dimensional transistor material; an oxide layer disposed over the channel; wherein an I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring over or near the chemically-sensitive field effect transistor.