发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having the higher integration and including a smaller semiconductor chip.SOLUTION: The semiconductor device includes: a semiconductor substrate SUB; an insulating layer CL including silicon oxide formed on the semiconductor substrate SUB; and a semiconductor layer SL including silicon formed on the insulating layer CL. With the semiconductor layer SL, an optical waveguide PO of an optical signal transmission line portion A and an optical modulator PC of an optical modulation portion B are formed. The insulating layer CL partly has a hollow structure with a cavity. The opposite side surfaces and the bottom surface of the semiconductor layer SL included in the optical waveguide PO and the optical modulator PC are exposed and covered with air.SELECTED DRAWING: Figure 1
申请公布号 JP2016180860(A) 申请公布日期 2016.10.13
申请号 JP20150060872 申请日期 2015.03.24
申请人 RENESAS ELECTRONICS CORP 发明人 WATANUKI SHINICHI;INADA MITSURO
分类号 G02B6/122;G02B6/12;G02B6/132;G02F1/025 主分类号 G02B6/122
代理机构 代理人
主权项
地址