| 摘要 |
PROBLEM TO BE SOLVED: To give a higher shock resistance in a semiconductor device having a transistor using an oxide semiconductor, and to provide a semiconductor device capable of dealing with further diversified use applications and that has an improved convenience and a high reliability.SOLUTION: A semiconductor device comprises on a substrate a gate electrode, a first insulating layer, an oxide semiconductor layer, a second insulating layer, and a conductive layer. Each of the gate electrode and the conductive layer extends beyond both ends of the oxide semiconductor layer in a channel width direction of a transistor. At a cross section in the channel width direction of the transistor, the oxide semiconductor layer is surrounded by the gate electrode, the first insulating layer, the second insulating layer, and the conductive layer.SELECTED DRAWING: Figure 1 |
