Semiconductor device and semiconductor device producing system
摘要
<p>An insulating film having depressions and projections is formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle. <IMAGE></p>
申请公布号
EP1326273(A3)
申请公布日期
2005.07.06
申请号
EP20020028650
申请日期
2002.12.20
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人
ISOBE, ATSUO;DAIRIKI, KOJI;SHIBATA, HIROSHI;KOKUBO, CHIHO;ARAO, TATSUYA;HAYAKAWA, MASAHIKO;MIYAIRI, HIDEKAZU;SHIMOMURA, AKIHISA;TANAKA, KOICHIRO;YAMAZAKI, SHUNPEI;AKIBA, MAI (FORMERLY MAI OSADA)