发明名称 |
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
摘要 |
<p>A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved. <IMAGE></p> |
申请公布号 |
EP1551063(A1) |
申请公布日期 |
2005.07.06 |
申请号 |
EP20030736016 |
申请日期 |
2003.06.04 |
申请人 |
NITRIDE SEMICONDUCTORS CO., LTD. |
发明人 |
SATO, HISAO,;SUGAHARA, TOMOYA;KITAZAWA, S.,;MURAMOTO, Y.,;SAKAI, SHIRO |
分类号 |
H01L33/04;H01L33/06;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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