| 摘要 |
A non-volatile memory cell can include a substrate, an active region overlying the substrate, and a capacitor structure overlying the substrate. From a plan view, the capacitor structure surrounds the active region. In one embodiment, the non-volatile memory cell includes a floating gate electrode and a control gate electrode. The capacitor structure comprises a first capacitor portion, and the first capacitor portion comprises a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is electrically connected to the floating gate electrode, and the second capacitor electrode is electrically connected to the control gate electrode. A process for forming the non-volatile memory cell can include forming an active region over a substrate, and forming a capacitor structure over the substrate, wherein from a plan view, the capacitor structure surrounds the active region.
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