SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE

摘要

A bipolar high voltage/power semiconductor device (1) has a low voltage terminal and a high voltage terminal. The device (1) has a drift region (2) of a first conductivity type and having first and second ends. In one example, a region (5) of the second conductivity type is provided at the second end of the drift region (2) connected directly to the high voltage terminal. In another example, a buffer region (6) of the first conductivity type is provided at the second end of the drift region (2) and a region (5) of the second conductivity type is provided on the other side of the buffer region (6) and connected to the high voltage terminal. Plural electrically floating island regions (9) are provided within the drift region (2) at or towards the second end of the drift region (2), the plural electrically floating island regions (9) being of the first conductivity type and being more highly doped than the drift region (2) .