发明名称 |
A TRANSISTOR HAVING A STRAINED CHANNEL REGION INCLUDING A PERFORMANCE ENHANCING MATERIAL COMPOSITION |
摘要 |
<p>By forming a semiconductor alloy (107, 107A, 107B, 207A, 207B, 307) in a silicon-based active semiconductor region prior to the gate patterning, material characteristics of the semiconductor alloy itself may also be exploited in addition to the strain-inducing effect thereof. Consequently, device performance of advanced field effect transistors may be even further enhanced compared to conventional approaches using a strained semiconductor alloy in the drain and source regions.</p> |
申请公布号 |
WO2008016512(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
WO2007US16612 |
申请日期 |
2007.07.24 |
申请人 |
ADVANCED MICRO DEVICES, INC.;WIRBELEIT, FRANK;WEI, ANDY;BOSCHKE, ROMAN |
发明人 |
WIRBELEIT, FRANK;WEI, ANDY;BOSCHKE, ROMAN |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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