| 发明名称 |
INTEGRATED CIRCUIT HAVING A SEMICONDUCTOR SUBSTRATE WITH A BARRIER LAYER |
| 摘要 |
An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.
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| 申请公布号 |
US2009026616(A1) |
申请公布日期 |
2009.01.29 |
| 申请号 |
US20070828865 |
申请日期 |
2007.07.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DERTINGER STEPHAN;MARTIN ALFRED;HALSER BARBARA;SOMMER GRIT;BINDER FLORIAN |
| 分类号 |
H01L23/48;H01L21/4763 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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