| 摘要 |
In a silicon carbide ceramic assembly formed by bonding multiple substrates including a silicon carbide ceramic substrate, the multiple substrates are ceramic substrates including silicon carbide or a ceramic substrate including silicon carbide and a metal substrate. Silicon is used as a bonding material, and the relationship 0.1≤b/a≤0.5 is established, where a is the thickness of the bonded portion of the substrates and b is the width of the bonding material. As a result, a long and large silicon carbide ceramic assembly is provided which can be used at temperatures over 1000°C. |
