发明名称 Read amplifier for detecting condition of e.g. flash memory cell, has reference current source to provide reference current to input of amplifier, and clocked control flip-flop for controlling source as reaction of control clock signal
摘要 <p>The amplifier has a reference current source (100) to provide a reference current to an input of the read amplifier. The current source has a reference transistor with a source, a drain and a gate in a preset state. A clocked control flip-flop is provided for controlling the current source as reaction of a control clock signal. A clocked collecting flip-flop is provided for selecting the current supplied to the input as reaction of a collecting clock signal. An independent claim is also included for a method for testing a speed of a read amplifier.</p>
申请公布号 DE102005051996(A1) 申请公布日期 2007.05.03
申请号 DE20051051996 申请日期 2005.10.31
申请人 INFINEON TECHNOLOGIES AG 发明人 ATTI, MASSIMO;SCANFERLA, ALESSANDRO
分类号 G11C29/12 主分类号 G11C29/12
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