| 摘要 |
A booster circuit is provided to improve a performance of a booster by increasing a self resonant frequency. A booster circuit includes a transistor(Q32), and a gain compensation unit(30). The transistor amplifies and outputs a high frequency signal inputted from a base terminal to a bias voltage supplied from a collector voltage. The gain compensation unit compensates a gain of a high frequency band by increasing a self resonant frequency of a dual emitter terminal of the transistor. The gain compensation unit is a passive element having a high self resonant frequency. The passive element is a condenser which passes a high frequency. The gain compensation unit is a couple of condensers which have a small same capacitance value and are configured in parallel. |
