| 摘要 |
A method of inspecting defects in a semiconductor device includes forming a test pattern in a scribe lane region of a semiconductor substrate. The test pattern includes a second conductive layer formed on an isolation layer of the semiconductor substrate. Further, the method includes measuring a current flowing between the second conductive layer and the semiconductor substrate by applying a first voltage between the second conductive layer and the semiconductor substrate. Defects formed in the isolation layer can be inspected during a semiconductor manufacturing process. Accordingly, the yield of semiconductor devices can be improved with the inspection results.
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