| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting device, an ion implanting method, which controls implanting amount of ion with high precision even if a divergence angle of ion beam and an inclination of beam are changed, and also to provide a manufacturing method of a semiconductor device. SOLUTION: The ion implanting device comprises an ion source part, an acceleration/deceleration part, an ion beam shielding part, a measurement part for measuring at least either one of a divergence angle of ion beam and an inclination of beam, a substrate holding part for holding a substrate, and a control part. The control part corrects a process condition for ion implantation so that the implantation amount of ion into the substrate is controlled within a specified range, based on at least either one of measurement values, the divergence angle measured by the measurement part and the inclination of beam, for controlling at least any one of actions of the ion source part, acceleration/deceleration part, ion beam shielding part, and substrate holding part. COPYRIGHT: (C)2009,JPO&INPIT
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