BONDING PROCESS USING TEMPERATURE CONTROLLED CURVATURE CHANGE

摘要

A first substrate including a radius of curvature and a stressor layer is first provided. An outermost bowed, e.g., curved, surface of the first substrate is then brought into intimate contact with a surface of a second substrate. Bonding of the entirety of the first substrate to the second substrate is then achieved by reducing the radius of curvature of the first substrate by controlling the temperature at which bonding occurs.

主权项

1. A method of bonding a first substrate to a second substrate, said method comprising:
providing a first substrate having a radius of curvature and containing a stressor layer; contacting an outermost bowed surface of said first substrate to a portion of a surface of a second substrate; and bonding said first substrate to an entirety of said surface of said second substrate, wherein said bonding is performed at a temperature that removes said radius of curvature of said first substrate.