| 发明名称 |
DIAMOND MULTILAYER STRUCTURE |
| 摘要 |
A diamond multilayer structure comprises: a nitride semiconductor layer that have a first main surface and a second main surface and comprises a nitride semiconductor having a wurtzite structure and containing B; and a diamond layer located on the first main surface of the nitride semiconductor layer. |
| 申请公布号 |
US2016218183(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514975659 |
申请日期 |
2015.12.18 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
CHOE SONGBAEK;SUZUKI ASAMIRA |
| 分类号 |
H01L29/16;H01L29/04;H01L29/20 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A diamond multilayer structure comprising:
a nitride semiconductor layer that have a first main surface and a second main surface and comprises a nitride semiconductor having a wurtzite structure and containing B; and a diamond layer located on the first main surface of the nitride semiconductor layer. |
| 地址 |
Osaka JP |
