REVERSE CONDUCTING IGBT

摘要

PROBLEM TO BE SOLVED: To provide a technology of suppressing a snapback phenomenon occurring when a reverse conducting IGBT is turned on.SOLUTION: A semiconductor layer 10 of a reverse conducting IGBT 1 includes a p-type rectifier area 12 provided between an ntype cathode area 13 and a collector area 22. The rectifier area 12 is in contact with the cathode area 13 and is electrically connected to the collector area 22.SELECTED DRAWING: Figure 1