Multi-time programmable non-volatile memory

摘要

A process for creating a low-cost multi-time programmable (MTP) non-volatile memory (NVM) and the resulting device are provided. Embodiments include forming a select gate and a floating gate above a substrate, each over a first shallow trench isolation (STI) region, a doped region formed between a source and a drain, and a second STI region, forming a metal layer over the floating gate, and forming a pair of self-aligned contacts on the first and second STI regions on opposite sides of the doped region, respectively, and electrically connected to the metal layer.

主权项

1. A method comprising:
forming a select gate and a floating gate above a substrate, each over a first shallow trench isolation (STI) region, a doped region formed between a source and a drain, and a second STI region; forming a metal layer over the floating gate; and forming a pair of self-aligned contacts on the first and second STI regions on opposite sides of the doped region, respectively, and electrically connected to the metal layer.