发明名称 Method and system for laser separation for exclusion region of multi-junction photovoltaic materials
摘要 A method for laser separation of a thin film structure with multi junction photovoltaic materials. The method includes providing an optically transparent substrate having a thickness, a back surface region, and a front surface region including an edge region. The method further includes forming a thin film structure including a conductive layer on the optical transparent substrate. The conductive layer immediately overlies the front surface region. Additionally, the method includes aligning a laser beam with a beam spot on a first portion of the edge region from the back surface region through the thickness of the optically transparent substrate. The method further includes subjecting at least partially the conductive layer overlying the first portion via absorbed energy from the laser beam to separate an edge portion of the thin film structure from the first portion of the edge region.
申请公布号 US8772078(B1) 申请公布日期 2014.07.08
申请号 US200912389188 申请日期 2009.02.19
申请人 Stion Corporation 发明人 Farris, III Chester A.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A method for processing a thin film device by laser separation, the method comprising: providing an optically transparent substrate having a thickness, a back surface region, a front surface region, and an edge region; forming a thin film device on the optically transparent substrate, the thin film device including a conductive layer overlying the front surface region and an edge portion overlying the edge region; covering the back surface region except an exposed area along the edge region; aligning a laser beam from the back surface region through the thickness of the optically transparent substrate to irradiate a first spot within the edge region; energy from the laser beam thereby selectively removing part of the edge portion to form a remaining side wall portion to expose at least the conductive layer, a P-type semiconductor layer overlying the conductive layer, a N-type semiconductor layer overlying the P-type semiconductor layer, and an electrode layer overlying the N-type semiconductor layer, exposed edges of the plurality of layers being substantially free from residue particles; and scanning the laser beam along the exposed area.
地址 San Jose CA US