CHAMBER COMPONENTS FOR EPITAXIAL GROWTH APPARATUS

摘要

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

主权项

1. An upper side wall for an epitaxial growth apparatus, the upper side wall including a body, comprising:
an upper surface including an annular shape configured to form an abutment with a ceiling plate, wherein the annular shape is disposed about a center axis; a bottom surface including abutment surfaces and flow guiding surfaces, the abutment surfaces are configured to form an abutment with a lower side wall supporting the upper side wall, and the flow guiding surface are configured to direct precursor gases to and from a substrate; and first and second convex portions each extending from the bottom surface, wherein the flow guiding surfaces are disposed between the first and the second convex portions.