主权项 |
1. A method of forming a thin film, comprising:
performing a first film formation process of, while an interior of a reaction chamber accommodating an object to be processed is heated to a predetermined temperature, alternately supplying a plurality of times an organic metal compound gas into the reaction chamber to adsorb the organic metal compound onto the object to be processed, and a first oxidizing agent into the reaction chamber heated to the predetermined temperature to oxidizing the organic metal compound adsorbed onto the object to be processed, thereby forming a thin film; after the first film formation process is ended, performing an annealing process of, while the interior of the reaction chamber is heated to the predetermined temperature, supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber; and after the annealing process is ended, performing a second film formation process of, while the interior of the reaction chamber is heated to the predetermined temperature, alternately supplying a plurality of times the organic metal compound gas into the reaction chamber to adsorb the organic metal compound onto the thin film formed in the first film formation process, and the second oxidizing agent into the reaction chamber heated to the predetermined temperature to oxidize the organic metal compound adsorbed onto the thin film formed in the first film formation process, thereby forming a thin film. |