SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE AND LIFT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which an interface state on a SiC surface is reduced.SOLUTION: A semiconductor device of an embodiment comprises: a SiC layer having a first surface; an insulation layer; and a region between the first surface of the SiC layer and the insulation, which contains at least one element of a group consisting of Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium) and Ba (barium), and a full width at half maximum of a concentration peak of the element is 1 nm or less, and when assuming that a surface density on the first surface of Si (silicon) and C (carbon) which have a bond not to be coupled with Si (silicon) or C (carbon) in the SiC layer is defined as a first surface density, a second surface density which is a surface density of the element is equal to or less than half the first surface density.SELECTED DRAWING: Figure 1