| 发明名称 |
Reading a memory element within a crossbar array |
| 摘要 |
A method for reading a memory element within a crossbar array includes switching a column line connected to a target memory element of the crossbar array to connected to an input of a current mirror; applying an error voltage to unselected rows of the crossbar array; applying a sense voltage to a row line connected to the target memory element; and outputting a current with said current mirror. |
| 申请公布号 |
US8780613(B1) |
申请公布日期 |
2014.07.15 |
| 申请号 |
US201314048521 |
申请日期 |
2013.10.08 |
| 申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Perner Frederick |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for reading a memory element within a crossbar array, the method comprising:
switching a column line connected to a target memory element of said crossbar array to connect to an input of a current mirror; applying an error voltage to unselected rows of said crossbar array; applying a sense voltage to a row line connected to said target memory element, wherein applying the sense voltage includes matching said error voltage to a voltage formed across said current mirror; and outputting a current with said current mirror. |
| 地址 |
Houston TX US |
