发明名称 NITRIDE-BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To obtain a semiconductor chip by cutting a substrate efficiently. CONSTITUTION: A nitride-based crystal is successively grown on such a substrate as sapphire by MOCVD or the like, and further a p electrode and an n electrode are formed. By cutting a wafer 1 along two directions forming 120° each other instead of cutting along two orthogonal directions, a diamond-like semiconductor chip is obtained. Since the semiconductor chip has six-fold rotary symmetry within one surface of the wafer. Therefore, by cutting the semiconductor chip at an angle of 120°, cutting directions become equivalent one another for cutting in a direction for achieving easy cutting.
申请公布号 KR20020060617(A) 申请公布日期 2002.07.18
申请号 KR20020001554 申请日期 2002.01.10
申请人 NITRIDE SEMICONDUCTORS CO., LTD.;SAKAI SHIRO 发明人 LACROIX YVES;SAKAI SHIRO
分类号 H01L21/02;H01L21/301;H01L33/14;H01L33/32;H01L33/42;(IPC1-7):H01L33/00 主分类号 H01L21/02
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