发明名称 Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device
摘要 A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % interstitial oxygen atoms in the metal crystalline phase.
申请公布号 US2005170534(A1) 申请公布日期 2005.08.04
申请号 US20050055177 申请日期 2005.02.11
申请人 NEC ELECTRONICS CORPORATION 发明人 HASE TAKESHI
分类号 C23C14/08;H01L21/02;H01L21/28;H01L21/316;H01L21/3205;H01L21/8246;H01L23/52;H01L27/105;H01L27/115;(IPC1-7):H01L21/00;H01L21/20 主分类号 C23C14/08
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