发明名称 |
Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device |
摘要 |
A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % interstitial oxygen atoms in the metal crystalline phase.
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申请公布号 |
US2005170534(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050055177 |
申请日期 |
2005.02.11 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
HASE TAKESHI |
分类号 |
C23C14/08;H01L21/02;H01L21/28;H01L21/316;H01L21/3205;H01L21/8246;H01L23/52;H01L27/105;H01L27/115;(IPC1-7):H01L21/00;H01L21/20 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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