发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, ELECTROOPTIC DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve AC operating characteristics of a differential amplifier circuit in a semiconductor integrated circuit device which operates at low power supply voltage.SOLUTION: A semiconductor integrated circuit device comprises: a first MOS transistor and a second MOS transistor which compose a differential pair; a third MOS transistor and a fourth MOS transistor which are connected to drains of the first and second MOS transistors, respectively, to compose a load transistor pair; and a fifth MOS transistor which supplies constant current to a connection point of a source of the first MOS transistor and a source of the second MOS transistor. The fifth MOS transistor has a gate width wider than a gate width of each of the first through fourth MOS transistors and has a gate length longer than a gate length of each of the first through fourth MOS transistors.SELECTED DRAWING: Figure 2
申请公布号 JP2016140007(A) 申请公布日期 2016.08.04
申请号 JP20150015105 申请日期 2015.01.29
申请人 SEIKO EPSON CORP 发明人 KAWAKAMI MASAYUKI
分类号 H03F3/45;H01L21/82;H01L21/822;H01L27/04 主分类号 H03F3/45
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