SOLID-STATE IMAGE PICKUP DEVICE

摘要

In a CMOS image sensor, a plurality of bias circuits are dispersedly arranged in an arrangement region of column circuits (10) corresponding to each column of a pixel array (101). Each bias circuit (50) generates a bias voltage on the basis of a reference current (Iref) which has been input and supplies the generated bias voltage to the corresponding column circuit (10) which is arranged in the vicinity. Thereby, the luminance unevenness of a picked-up image caused by an IR drop of a ground wire for the column circuits is reduced.