INP-BASED QUANTUM DOT AND METHOD FOR PRODUCING THE SAME

摘要

The present invention relates to a manufacturing method of an InP-based quantum dot. The manufacturing method of the present invention comprises: a step of mixing a first compound including indium (In) in a first amine-based solvent to form a reaction solution; a first temperature elevation step for elevating the temperature of the reaction solution to the reaction temperature; a step of inserting tris(dimethylamino)phosphine in the temperature-elevated reaction solution; and a step of inserting a second amine-based solvent in the tris(dimethylamino)phosphine-inserted reaction solution. The manufacturing method of an InP-based quantum dot has excellent size uniformity, even if P(DMA)_3 is used as a P precursor.