| 摘要 |
PROBLEM TO BE SOLVED: To provide: a CMP polishing liquid providing a high barrier film polishing speed, enabling an interlayer dielectric to be polished at a high speed, and having favorable abrasive grain stability in the CMP polishing liquid; and a polishing method.SOLUTION: There are provided a CMP polishing liquid and a polishing method using the CMP polishing liquid is used. The CMP polishing liquid includes a medium, a metal corrosion inhibitor, a metal oxide solubilizer, a water-soluble polymer, and silica particles as abrasive grains dispersed in the medium, and has a pH in an acid region. The CMP polishing liquid is characterized in that: (A2) the silica particles have a silanol group density of 5.0/nmor less, and are not subjected to a surface treatment; (B2) a biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image observed using a scanning electron microscope is 60 nm or less; and (C2) the degree of association of the silica particles is 1.20 or less or in the range of 1.40-1.80. |
