| 摘要 |
PROBLEM TO BE SOLVED: To provide a high intensity bonding wire for a multiple-pin semiconduc tor device by decreasing the ball hardness of the Au-based wire which contains a large quantity of Ag. SOLUTION: This wire comprises Ag at 1-40%, Ca at 0.0001-0.01% and Sn at 0.0001-0.01%, and the remaining part comprises Au and unavoidable impurities. Furthermore, one ore more kinds from among Ag of 1-40%, Ca of 0.0001-0.01% Sn of 0.0001-0.01% and one or more kinds of Cu, Pt, Pd, Ru, Os, Rh and Ir at 0.1-5% are contained in total. The remaining part comprises Au and unavoidable impurities. Furthermore, Ag of 1-40%, Ca of 0.0001-0.01%, Sn of 0.0001-0.01% and one or more kinds of Be, Ge and In of 0.0001-0.005% are included, and the remaining part comprises Au and unavoidable impurities. |
