发明名称 |
Method for selectively stressing MOSFETs to improve charge carrier mobility |
摘要 |
A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
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申请公布号 |
US2006223255(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060370397 |
申请日期 |
2006.03.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHIEN-HAO;CHEN CHIA-LIN;HSU JU-WANG;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L21/8238;H01L29/76 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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