SEMICONDUCTOR DEVICE MULTILAYER STRUCTURE, FABRICATION METHOD FOR THE SAME, SEMICONDUCTOR DEVICE HAVING THE SAME, AND SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. After forming the diffusion barrier layer, a heat treatment process may be additionally performed thereon. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.