METHOD OF FABRICATING THE RECESS TRENCH FOR RECESS GATE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a recess gate trench of a semiconductor device is provided to reduce the height of horn by performing a cleaning process after the recess gate trench is formed. A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(400). After an isolation layer(410) is formed in the substrate, an active region is defined by removing the pad nitride layer. A hard mask is formed on the pad oxide layer and the isolation layer. A hard mask pattern and a pad oxide pattern(460) are formed to expose a desired portion of the substrate. A recess gate trench(470) is formed by etching the exposed substrate using the hard mask pattern as a mask. The resultant structure is then cleaned by using NH4 : H2O2 : H2O as a cleaning solution.