| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric converter which has high conversion efficiency and is excellent in productivity, and to provide its manufacturing method. <P>SOLUTION: On a first electrode 102, a single conductive type crystalline semiconductor particles are thickly dispersed, and single conductive type crystalline semiconductor particles 107 wherein adjoining particles are fusion-bonded by irradiation, etc. of a laser beam are formed. Further, a semiconductor layer 108 of a conductive type reverse to the single conductive type, which forms bonding with single conductive type crystalline semiconductor particles 104, is formed. Further a second electrode 110 is provided. By such a constitution as this, the movement in a transverse direction of carriers generated in the crystalline semiconductor particles 104 is not inhibited to obtain a significant effect that almost the same layer as the case where the layer is made of one single crystal silicon layer can be provided. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
