| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an optical semiconductor device in which an AuSn solder layer (Au: 70 wt.%) is reactivated after die bonding, assembling stress is relaxed, and the polarization characteristics and the far-field pattern characteristics of an optical semiconductor element can be improved. SOLUTION: In the optical semiconductor device having a semiconductor element 3 secured onto a metal stem 1 via a submount 2, the submount 2 is provided with an AuSn solder layer (Au: 70 wt.%) 23 on the surface of a heat sink material 21 and secured integrally with the metal stem 1, by simultaneously heating the semiconductor element 3, the submount 2 and the metal stem 1, and then baked at a temperature near the reactivation temperature of the AuSn solder layer 23. COPYRIGHT: (C)2008,JPO&INPIT
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