发明名称 |
LOW POWER OPERATION FOR FLASH MEMORY SYSTEM |
摘要 |
The present invention relates to a circuit and method for low power operation in a flash memory system. In disclosed embodiments of a selection-decoding circuit path, pull-up and pull-down circuits are used to save values at certain output nodes during a power save or shut down modes, which allows the main power source to be shut down while still maintaining the values. |
申请公布号 |
WO2016195845(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
WO2016US29390 |
申请日期 |
2016.04.26 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
TRAN, Hieu Van;LY, Anh;VU, Thuan;NGUYEN, Hung Quoc;NGUYEN, Viet Tan |
分类号 |
G11C5/14;G11C7/10;G11C7/22;G11C8/10;G11C8/12;G11C16/08;G11C16/30;G11C16/32;G11C29/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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