发明名称 LOW POWER OPERATION FOR FLASH MEMORY SYSTEM
摘要 The present invention relates to a circuit and method for low power operation in a flash memory system. In disclosed embodiments of a selection-decoding circuit path, pull-up and pull-down circuits are used to save values at certain output nodes during a power save or shut down modes, which allows the main power source to be shut down while still maintaining the values.
申请公布号 WO2016195845(A1) 申请公布日期 2016.12.08
申请号 WO2016US29390 申请日期 2016.04.26
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 TRAN, Hieu Van;LY, Anh;VU, Thuan;NGUYEN, Hung Quoc;NGUYEN, Viet Tan
分类号 G11C5/14;G11C7/10;G11C7/22;G11C8/10;G11C8/12;G11C16/08;G11C16/30;G11C16/32;G11C29/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址