发明名称 |
SILICON PARTICLE TREATING BEDPLATE, ITS MANUFACTURING METHOD AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON PARTICLE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon particle treating bedplate which is thermally stable and prevented from being deformed and allows the manufacturing of crystalline silicon particles having high crystallinity at a low cost. <P>SOLUTION: The silicon particle treating bedplate 1 is used for making silicon particles mounted on its upper surface into the single crystal silicon particles by melting and then solidifying the silicon particles. In the bedplate 1, a cristobalite crystal layer 1b is formed on the surface of a base body 1a made of quartz glass, and the cristobalite crystal layer 1b functions as a surface reinforcing layer. Thereby, the thermal deformation of the base body 1a can be prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006151722(A) |
申请公布日期 |
2006.06.15 |
申请号 |
JP20040342829 |
申请日期 |
2004.11.26 |
申请人 |
KYOCERA CORP |
发明人 |
KITAHARA NOBUYUKI;TANABE HIDEYOSHI;OKUI HIROKI;ARIMUNE HISAO |
分类号 |
C30B29/06;C01B33/02;C30B11/00;H01L31/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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