发明名称 |
PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing a photomask in which sufficient process accuracy with low dependence of pattern density is obtained in an etching process. <P>SOLUTION: The photomask blank is a raw material of a photomask having a mask pattern including a transparent area to exposure light and an effectively opaque area formed on a transparent substrate 1, and has a light shielding film 2 comprising a metal or a metal compound that can be etched by fluorine-based dry etching, particularly a material containing a transition metal and silicon, and an etching mask film 4 comprising a metal or a metal compound having durability against fluorine-based dry etching, formed on the light shielding film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007241060(A) |
申请公布日期 |
2007.09.20 |
申请号 |
JP20060065763 |
申请日期 |
2006.03.10 |
申请人 |
SHIN ETSU CHEM CO LTD;TOPPAN PRINTING CO LTD |
发明人 |
YOSHIKAWA HIROKI;INAZUKI SADAOMI;OKAZAKI SATOSHI;HARAGUCHI TAKASHI;SAGA TADASHI;KOJIMA YOSUKE;CHIBA KAZUAKI;FUKUSHIMA YUICHI |
分类号 |
G03F1/30;G03F1/32;G03F1/34;G03F1/60;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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