<p>An apparatus and method for operating a direct wafer bonded semiconductor radiation detector includes bonding a plurality of wafers, receiving a radiation signal from a radiation source thereby producing electron and hole pairs via the radiation signal interacting with the detecting device. A voltage source produces a voltage across the direct bonded wafers, thereby drifting the electrons and holes through the plurality of bonded layers. The drifted electrons and/or holes include total drifted charge information of the detector and are collected and processed either at the detector or remote from the detector.</p>
申请公布号
WO2008024088(A2)
申请公布日期
2008.02.28
申请号
WO2005US40332
申请日期
2005.11.07
申请人
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY;PHLIPS, BERNARD;KUB, FRANCIS, J.;HOBART, KARL, D.;KURFESS, JAMES, D.
发明人
PHLIPS, BERNARD;KUB, FRANCIS, J.;HOBART, KARL, D.;KURFESS, JAMES, D.