MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in TFT characteristics and having uniform characteristics by making the interface between an active layer proper, especially a region constituting a channel forming region, and a gate insulating film, and to provide a manufacturing method for the semiconductor device. SOLUTION: The manufacturing method of the semiconductor device comprises a step for forming gate wiring on an insulation surface by sequentially laminating the gate insulating film and a semiconductor film on the gate wiring without being exposed to the atmosphere and crystallizing the semiconductor film by irradiating infrared rays or ultraviolet rays to form a crystalline semiconductor film and simultaneously forming an oxide film functioning as a protective film; a step for forming a mask comprising a photosensitive organic material in a region where a channel of the crystalline semiconductor film is formed; and a step for adding impurity elements to a region that should serve as a source region or a drain region of the crystalline semiconductor film via the oxide film. COPYRIGHT: (C)2008,JPO&INPIT